Samsung Electronics has announced a major technological breakthrough and a vision for the future. 

Recently, Samsung Electronics announced a major technological breakthrough and future vision, which is to apply the FinFET (Fin-shaped Field-Effect Transistor) manufacturing technology to the production of NAND Flash memory. This move is interpreted as Samsung's preparation to meet the demand for larger-capacity NAND Flash memory from artificial intelligence (AI). However, this technology is a future technology and its practical application will still take some time. 

Song Jae-hyuk, the technical director of Samsung's DS department, stated at SEDEX 2025 that the goal is to achieve the performance and power that customers expect within the unit area where transistors must be stacked. Among them, FinFET technology is one of the core elements of this innovative strategy. 

FinFET technology is a 3D manufacturing process technology. Due to its structure resembling fins (Fin), it is named FinFET. The main purpose of Samsung's introduction of this technology is to overcome the limitations of the traditional planar (2D) structure. 

Previously, FinFET was mainly used in wafer fabrication (foundry) and was expected to be equipped with 3D DRAM. This time, Samsung announced its plan to apply FinFET to NAND Flash flash memory, which is the first of its kind in the industry.

The semiconductor industry generally believes that once FinFET is applied to NAND Flash fast memory, compared with existing memory types, the integration density will significantly increase. Moreover, in the case of higher integration density, more components can be accommodated in a smaller space, further enhancing performance.