Model：BSP295H6327XTSA1

Manufacturer：Infineon Technologies

Stocks：1000

Describe：The SIPMOS® series of N-channel power MOSFETs, featuring advanced MOSFET technology, is specifically designed for high-performance switching applications. This device operates in enhancement mode, with a drain-to-source voltage of 60V, a continuous drain current of 1.8A, and an on-resistance of 300mΩ. It is packaged in a surface-mount PG-SOT223-4 package, has a power dissipation of 1.8W, and operates within a junction temperature range of -55°C to +150°C. Certified to AEC-Q101 automotive standards, it is suitable for low-voltage applications, battery-powered devices, DC-DC converters, power management, and automotive electronics, among other fields.