Model：TIP102

Manufacturer：STMicroelectronics

Stocks：8000

Describe：NPN Darlington power transistor, featuring a single-chip Darlington structure and built-in base-emitter parallel resistors. This device integrates two bipolar transistors in series on a single chip, providing extremely high DC current gain. Collector-emitter voltage 100V, collector current 8A, peak current up to 15A, power dissipation 2W - 80W (depending on the heat dissipation conditions of the package). Collector-emitter saturation voltage 2.5V @ 8A, minimum DC current gain hFE 1000 @ 3A. Built-in reverse parallel collector-emitter diode to provide protection for inductive loads. Adopted TO-220 through-hole packaging, suitable for linear and switching industrial equipment, audio power amplifiers, low-voltage DC motor drives and other applications requiring large current amplification.