Model：TK9J90E,S1E

Manufacturer：Toshiba

Stocks：1500

Describe：TK9J90E and S1E are N-channel power MOSFETs launched by Toshiba, featuring TO-3P(N) through-hole packaging. This device belongs to Toshiba's π-MOSⅧ series and is specifically designed for power applications such as switching regulators, operating in the enhanced mode. Key parameters: Source-drain voltage 900V, Continuous drain current 9A, Maximum on-resistance 1.3Ω @ 4.5A, 10V. Gate charge typical value 46nC @ 10V, Input capacitance typical value 2000pF @ 25V. Power dissipation up to 250W, Gate-source voltage ±30V. This device features low on-resistance (typical value 1.0Ω) and low leakage current characteristics (maximum IDSS of 10µA at 720V). It is packaged in a tube format, with a standard quantity of 25 pieces per tube. The maximum operating junction temperature is 150°C. It complies with RoHS3 standards and has an MSL level of Level-1 (unrestricted).