03P4J-T1-AZ

Renesas Electronics

400V silicon controlled rectifier (SCR)/thyristor, using surface mount SOT-89 (UPAK) package. This device is a unidirectional semiconductor switch component used for phase control, featuring highly sensitive gate triggering characteristics. The typical gate trigger current is extremely low, making it suitable for phase control applications that require high trigger sensitivity. The repetitive peak off-state voltage is 400V, the on-state current is 300mA, and the non-repetitive peak surge current is 6A. The circuit commutation turn-off time is 25µs, and the maximum holding current is 5mA. The operating junction temperature range is from -55°C to +125°C, and it is packaged in a compact SOT-89 (UPAK) surface mount package.

STMicroelectronics

8000

NPN Darlington power transistor, featuring a single-chip Darlington structure and built-in base-emitter parallel resistors. This device integrates two bipolar transistors in series on a single chip, providing extremely high DC current gain. Collector-emitter voltage 100V, collector current 8A, peak current up to 15A, power dissipation 2W - 80W (depending on the heat dissipation conditions of the package). Collector-emitter saturation voltage 2.5V @ 8A, minimum DC current gain hFE 1000 @ 3A. Built-in reverse parallel collector-emitter diode to provide protection for inductive loads. Adopted TO-220 through-hole packaging, suitable for linear and switching industrial equipment, audio power amplifiers, low-voltage DC motor drives and other applications requiring large current amplification.

NXP Semiconductors

10000

A high-speed CAN transceiver with standby mode provides an interface between the controller local area network (CAN) protocol controller and the physical dual-wire CAN bus. This device is NXP's third-generation high-speed CAN transceiver. Compared to previous products such as TJA1040, it significantly improves electromagnetic compatibility (EMC) and electrostatic discharge (ESD) performance. The data rate is up to 5Mbps, supports CAN FD communication, and is suitable for 12V and 24V systems. It features an extremely low current standby mode (maximum 5µA) and bus wake-up function, and can be directly connected to microcontrollers ranging from 3V to 5V. It is packaged in an 8-pin SOIC surface mount package, providing a reliable physical layer interface for high-speed CAN networks in automobiles and industries.

Texas Instruments

2000

Adjustable precision parallel voltage regulator, using SOT-23-3 surface mount packaging. This device is the B-level accuracy version of the TL432 series. It is a three-terminal adjustable parallel voltage regulator that ensures thermal stability throughout the operating temperature range. The output voltage can be adjusted arbitrarily within the range of 2.495V to 36V through two external resistors. It has a built-in typical output impedance of 0.2Ω. The active output circuit provides very sharp conduction characteristics, making it an excellent alternative to zener diodes. This device is suitable for applications such as on-board voltage regulation, adjustable power supplies, and switching power supplies that require precise voltage references.

Texas Instruments

5000

A four-channel wide bandwidth high-output drive operational amplifier, using CMOS technology, combines the bipolar input stage and CMOS output stage on the same chip. This device is a member of the TLC07x series. Compared to the previous generation, it has achieved significant performance improvements: the bandwidth has increased by 300% to 10 MHz, the voltage noise has decreased by 60% to 7 nV/√Hz, the input offset voltage has been reduced by 4 times to 1.5 mV, the power supply rejection ratio has increased by more than 40 dB to 130 dB. The input bias current is as low as 1.5 pA, the slew rate is as high as 19 V/µs, and the output current is up to 57 mA. The operating voltage range is 4.5 V to 16 V (single power supply) or ±2.25 V to ±8 V (dual power supply). It adopts a 14-pin SOIC-14 surface mount packaging, suitable for precision analog applications such as data converters, audio equipment, and medical instruments.

Texas Instruments

2000

The Excalibur™ series dual-channel precision low-power operational amplifiers are available in an 8-pin PDIP through-hole package. This device is based on Texas Instruments' advanced complementary bipolar Excalibur process, combining the best features of the OP21 with improved slew rate and unity gain bandwidth. The common-mode input voltage range includes the negative supply rail, making it suitable for low-level signal conditioning applications in single-supply or dual-supply configurations. It features an inverting protection circuit that prevents unexpected output changes when the input is below the negative supply rail. With an input offset voltage as low as 150 µV, a unity gain bandwidth of 2.8 MHz, a slew rate of 0.65 V/µs, and a supply current of only 550 µA per channel, it offers excellent performance in a variety of applications.

YAGEO Corporation

5000

C0G/NP0 medium-grade multi-layer ceramic surface-mount chip capacitor (MLCC) with surface-mount design. Capacitance value is 1500pF (1.5nF), with an accuracy of ±5%, rated voltage of 100V, and temperature coefficient C0G/NP0. C0G dielectric is a Class I material with temperature compensation properties. The capacitance variation is limited to ±30ppm/°C within the temperature range of -55°C to +125°C. The capacitance value does not change with time or voltage, and it has extremely high stability, extremely low ESR and ESL, and no piezoelectric noise. It is packaged in 1206 standard form, suitable for general electronic applications such as resonant circuits, filtering, bypassing, coupling, etc., which require high precision and stability.

KEMET Corporation

8000

C0G medium commercial-grade multilayer ceramic chip capacitor (MLCC) is designed with surface mount technology. The capacitance is 15pF, with an accuracy of ±5%, a rated voltage of 50V, and a temperature coefficient of C0G/NP0. C0G dielectric is a type I material and has temperature compensation properties. The capacitance variation is limited to ±30ppm/°C within the temperature range of -55°C to +125°C. The capacitance value does not change over time or with voltage, and it has extremely high stability, extremely low ESR and ESL, and no piezoelectric noise. It is suitable for resonant circuits, filtering, bypassing, coupling, etc., for general electronic applications that require high precision and stability.

Nexperia

2000

Low-power voltage-regulating zener diode, featuring a compact SOT23 (TO-236AB) plastic surface-mount device (SMD) package. The nominal zener voltage is 3.6V, with a power consumption of 250mW and a tolerance of ±5%. The reverse leakage current is only 5µA at 1V, and the zener impedance is 90Ω. The operating junction temperature range is -65°C to +150°C, and it has passed the AEC-Q101 automotive-grade certification. It is suitable for general voltage-regulating functions and is a basic discrete semiconductor device in the fields of consumer electronics, industrial control, and automotive electronics.

STMicroelectronics

5000

700V/12A sensitive gate logic level three-terminal bidirectional thyristor (TRIAC) adopts the through-core passivation glass junction technology. This device is a high-performance glass-passivated PNPN type component, suitable for general AC power supply switch applications. It can perform phase control and static switching for resistive or inductive loads. It has high commutation capability (4 quadrants), and is particularly recommended for inductive loads. The TO-220AB package provides an insulated packaging version (insulation voltage 2500V RMS), suitable for general applications requiring high surge current capacity.

Infineon Technologies

1000

The SIPMOS® series of N-channel power MOSFETs, featuring advanced MOSFET technology, is specifically designed for high-performance switching applications. This device operates in enhancement mode, with a drain-to-source voltage of 60V, a continuous drain current of 1.8A, and an on-resistance of 300mΩ. It is packaged in a surface-mount PG-SOT223-4 package, has a power dissipation of 1.8W, and operates within a junction temperature range of -55°C to +150°C. Certified to AEC-Q101 automotive standards, it is suitable for low-voltage applications, battery-powered devices, DC-DC converters, power management, and automotive electronics, among other fields.

Texas Instruments

2000

The automotive-grade 60V voltage-dropping DC-DC converter with Eco-Mode™ feature, employing current-mode control scheme. Input voltage range is 3.5V to 60V, output voltage adjustable (0.8V to 58V), maximum output current 1.5A. Built-in 200mΩ high-side power MOSFET, switching frequency range 100kHz to 2.5MHz, supports external clock synchronization. In light load, it adopts pulse-jump Eco-Mode™ control scheme, effectively reducing no-load input current to 116µA and turn-off current to only 1.5µA. Suitable for automotive electronics, industrial control and various high-voltage voltage-dropping conversion applications.

Qualcomm

2000

Single-port 10/100/1000 Mbps Gigabit Ethernet PHY transceiver, compliant with IEEE 802.3, 802.3u, and 802.3ab standards. This device integrates RGMII and SGMII MAC interfaces and supports both copper and fiber optic media types. It includes a built-in voltage regulator and advanced cable diagnostic functions, and supports synchronous Ethernet clock output and EEE energy-saving Ethernet technology. Powered by a 3.3V single power supply, with a typical operating temperature range of 0°C to 70°C (for commercial version), and packaged as a 48-pin QFN (6mm×6mm).

Texas Instruments

20000

0.5V ultra-low input voltage synchronous boost converter, using a fixed-frequency peak current mode control scheme. Input voltage range is 0.5V to 5.5V, output voltage is adjustable (2.2V to 5.5V), maximum output current is 3A. Two low on-resistance MOSFETs are built-in (47mΩ for the low side and 68mΩ for the high side), valley switching current limit typical value is 3.7A. Switching frequency is 1MHz (VIN > 1.5V), automatically enters power-saving mode at light load to maintain high efficiency. When turned off, input and output are completely disconnected, and the turn-off current is only 0.1µA. Suitable for various battery and super capacitor-powered portable devices.

Diodes Incorporated

5000

Single-channel high-side power distribution load switch, integrating short-circuit protection, overcurrent protection and overheat protection functions. Designed with P-channel MOSFET, the input voltage range is 2.7V to 5.5V, the maximum continuous output current is 2A, and the typical on-state resistance is 50mΩ. Low-level effective enable control is provided, along with load release and status flag output functions. It adopts a small SOT-25 (SC-74A) surface mount package, suitable for USB port power management, battery-powered devices, and various portable electronic products that require load switches.

Alpha and Omega Semiconductor (AOS)

2000

The 40A continuous current DrMOS power module is a high-efficiency synchronous step-down power stage module that integrates two asymmetric MOSFETs and a driver. The high-side MOSFET is optimized for low duty cycle fast switching (low capacitance and low gate charge), while the low-side MOSFET features an ultra-low on-resistance to minimize conduction losses. It adopts a compact 5mm×5mm QFN package design to minimize parasitic inductance and EMI signals. It is suitable for TTL and tri-state compatible synchronous step-down converter applications.